A design approach of GaN High Electron Mobility Transistor (HEMT) gate driver circuit for electric vehicles based on multi-objective optimization is presented in this paper. It is composed by two design stages, for each of which a number of spice-based simulations enable to obtain the objective functions, i.e. The efficiency and EMI levels. The latter consists of the maximum of the common mode current in the frequency range 150 kHz-30 MHz. Consequently, well-known optimization techniques are applied in order to optimally design the gate on resistances and the high side gate inductor of one leg inverter gate driver circuits. The validity of the proposed design approach has been proved through a simulation study in which the optimized gate driver circuit and a classical symmetrical gate driver circuit have been implemented on one leg inverter for comparison purposes. Simulation results highlight the effectiveness of the proposed design approach, as both higher efficiency and lower EMI level have been successfully achieved.
|Titel||IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society|
|Status||Udgivet - 2017|