Multi-Objective Gate Driver Design for a GaN-Based Half-Bridge Converter to Optimize Efficiency and Near-Field EMI

Paolo Pirino, Michele Losito, Amit Kumar, Gianluca Gatto, Santolo Meo, Wulf Toke Franke, Milad Moradpour

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Abstrakt

Wide band gap devices are inevitably the future of power electronic converters. However, their high switching speeds make the gate driver design a challenging task. In this way, parameterization of the gate driver resistors is critical to determine the slew rate and consequently the produced power loss and electromagnetic noise of the switch. To address these issues, in this paper, a post-prototyping multi-objective optimization method is introduced in order to parameterize the gate driver resistors. The method then is applied on a GaN-based half-bridge converter to reduce both power loss and electromagnetic noise. To evaluate the electromagnetic noise, near-field EMI of the GaN device is considered. Finally, the experimental results are provided to show the effectiveness of the method.

OriginalsprogEngelsk
TidsskriftInternational Review of Electrical Engineering
Vol/bind16
Udgave nummer2
Sider (fra-til)95-103
Antal sider9
ISSN1827-6660
DOI
StatusUdgivet - apr. 2021

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