Modelling of perovskite/InGaAs tandem solar cells

Xingzhi Du, Tao Tang, Yiming Liu, Hang Zhou*

*Kontaktforfatter for dette arbejde

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

Narrow bandgap photovoltaic materials play a crucial role in the development of perovskite tandem cells. The In0.53Ga0.47As with a bandgap of 0.77 eV and excellent optical properties, is a kind of excellent bottom cell material for high efficiency tandem cells, as proven by III-V tandem cells. Here, we design and simulate perovskite/InGaAs 4-terminal and 2-termianl tandem cells by wxAMPS, with efficiencies reaching 17.85% and 22.71%, respectively.

OriginalsprogEngelsk
Titel2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)
ForlagIEEE
Publikationsdatoapr. 2018
Sider186-187
ISBN (Elektronisk)978-1-5386-2772-3
DOI
StatusUdgivet - apr. 2018
Begivenhed12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017 - Singapore, Singapore
Varighed: 2. okt. 20174. okt. 2017

Konference

Konference12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017
LandSingapore
BySingapore
Periode02/10/201704/10/2017
SponsorIEEE NTC, NTU College of Engineering, NTU School of Electrical and Electronic Engineering, Singapore University of Technology and Design

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