Modelling of grazing-incidence X-ray diffraction from naphthyl end-capped oligothiophenes in organic field-effect transistors

  • Michael Winokur
  • , Mathias Huss-Hansen
  • , Andreas E. Lauritzen
  • , Mika Torkkeli
  • , Jakob Kjelstrup-Hansen
  • , Matti Knaapila

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Abstract

The structure of two naphthylene-capped oligothiophene, 5,5′-bis(naphth-2-yl)-2,2′- bi- and tri- thiophene, thin-film field-effect transistor assemblies has been studied using modeling in conjunction with grazing incidence X-ray diffraction. Although the well-known herringbone molecular packing motif is observed in these films for both compounds, density functional calculations and molecular mechanics modeling give evidence for a local polymorphic ordering in which these molecules can be flipped 180° about the long axis. In one case, that of the oligothiophene trimer, a disordered surface induced phase is observed. Prospective structural models are tested and refined using various supercell constructions optimized by molecular mechanics prior to structure refinements of the thin-film scattering data.

OriginalsprogEngelsk
TidsskriftCrystal Growth & Design
Vol/bind20
Udgave nummer6
Sider (fra-til)3968-3978
ISSN1528-7483
DOI
StatusUdgivet - 3. jun. 2020

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