Abstrakt
The initial adsorption of oxygen on Si(111) surfaces proceeds via a molecular intermediate which is precursor to the stable dissociated adsorption state. This metastable precursor can only be observed under certain conditions; its conversion to the stable state depends on temperature, probe, surface structure, impurities, and oxygen coverage. The precursor is likely to be a peroxy-bridge configuration whereas the stable dissociated oxygen species forms short-bridge bonds between adjacent Si atoms.
Originalsprog | Engelsk |
---|---|
Tidsskrift | Physical Review Letters |
Vol/bind | 55 |
Udgave nummer | 27 |
Sider (fra-til) | 2979-2982 |
Antal sider | 4 |
ISSN | 0031-9007 |
DOI | |
Status | Udgivet - 1. jan. 1985 |