Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy

S. Tougaard*, P. Morgen, J. Onsgaard

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Abstrakt

Oxygen adsorption on the Si(110) surface has been studied by Auger electron spectroscopy. For a clean annealed surface chemisorption occurs, with an initial sticking probability of ∼6 × 10-3. In this case the oxygen okll signal saturates and no formation of SiO2 can be detected from an analysis of the Si L2,3VV lineshape. With electron impact on the surface during oxygen exposure much larger quantities are adsorbed with the formation of an SiO2 surface layer. This increased reactivity towards oxygen is due to either a direct effect of the electron beam or to a combined action of the beam with residual CO during oxygen inlet, which creates reactive carbon centers on the surface. Thus in the presence of an electron beam on the surface separate exosures to CO showed adsorption of C and O. For this surface subsequent exposure in the absence of the electron beam resulted in additional oxygen adsorption and formation of SiO2. No adsorption of CO could be detected without electron impact. The changes in surface chemistry with adsorption are detectable from the Si L2,3VV Auger spectrum. Assignments can be made of two main features in the spectra, relating to surface and bulk contributions to the density of states in the valence band.

OriginalsprogEngelsk
TidsskriftSurface Science
Vol/bind111
Udgave nummer3
Sider (fra-til)545-554
Antal sider10
ISSN0039-6028
DOI
StatusUdgivet - 2. nov. 1981

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