Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

144 Downloads (Pure)

Resumé

The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier distribution between source and drain electrodes of the transistor for different biasing conditions. We observe the expected hole density gradient from source to drain electrode.
OriginalsprogEngelsk
TidsskriftOrganic Electronics
Vol/bind49
Sider (fra-til)69-75
ISSN1566-1199
DOI
StatusUdgivet - 2017

Fingeraftryk

Thin film transistors
Charge carriers
Carrier concentration
charge carriers
Photoluminescence
transistors
photoluminescence
life (durability)
Transistors
thin films
Electrodes
Photoluminescence spectroscopy
electrodes
Gate dielectrics
electrical measurement
Numerical models
Microscopic examination
Grain boundaries
grain boundaries
Metals

Citer dette

@article{0969afb985e54f259d6498f1542a4bab,
title = "Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies",
abstract = "The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier distribution between source and drain electrodes of the transistor for different biasing conditions. We observe the expected hole density gradient from source to drain electrode.",
author = "Till Lei{\ss}ner and Jensen, {Per Baunegaard With} and Yiming Liu and Brewer, {Jonathan R.} and Jacek Fiutowski and Horst-G{\"u}nter Rubahn and Jakob Kjelstrup-Hansen",
year = "2017",
doi = "10.1016/j.orgel.2017.06.043",
language = "English",
volume = "49",
pages = "69--75",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",

}

Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies. / Leißner, Till; Jensen, Per Baunegaard With; Liu, Yiming; Brewer, Jonathan R.; Fiutowski, Jacek; Rubahn, Horst-Günter; Kjelstrup-Hansen, Jakob.

I: Organic Electronics, Bind 49, 2017, s. 69-75.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies

AU - Leißner, Till

AU - Jensen, Per Baunegaard With

AU - Liu, Yiming

AU - Brewer, Jonathan R.

AU - Fiutowski, Jacek

AU - Rubahn, Horst-Günter

AU - Kjelstrup-Hansen, Jakob

PY - 2017

Y1 - 2017

N2 - The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier distribution between source and drain electrodes of the transistor for different biasing conditions. We observe the expected hole density gradient from source to drain electrode.

AB - The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier distribution between source and drain electrodes of the transistor for different biasing conditions. We observe the expected hole density gradient from source to drain electrode.

U2 - 10.1016/j.orgel.2017.06.043

DO - 10.1016/j.orgel.2017.06.043

M3 - Journal article

VL - 49

SP - 69

EP - 75

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

ER -