Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Giorgo Kapino; Toke Franke

doi:10.1109/CPE.2019.8862397

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Giorgo Kapino
, Toke Franke

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstract

In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

Originalsprog	Engelsk
Titel	2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
Antal sider	5
Forlag	IEEE
Publikationsdato	10. okt. 2019
ISBN (Elektronisk)	978-1-7281-3202-0, 978-1-7281-3201-3, 978-1-7281-3203-7
DOI	https://doi.org/10.1109/CPE.2019.8862397
Status	Udgivet - 10. okt. 2019
Begivenhed	13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 - University of Southern Denmark, Sønderborg, Danmark Varighed: 23. apr. 2019 → 25. apr. 2019 http://www.cpe-powereng.gov

Konference

Konference	13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
Lokation	University of Southern Denmark
Land/Område	Danmark
By	Sønderborg
Periode	23/04/2019 → 25/04/2019
Internetadresse	http://www.cpe-powereng.gov

Dokumenter og links

10.1109/CPE.2019.8862397

SDU link

Tjek adgangen til materialet i Syddansk Universitetsbiblioteks søgemaskine

1 Afsluttet

High Speed Drives
Franke, W.-T. (Vejleder) & Kapino, G. (Ph.d.-studerende)
01/08/2018 → 31/07/2021
Projekter: Projekt › Ph.d-projekt

Citationsformater

@inproceedings{9c3a1c0074994d64bb2e102019d7ecac,

title = "Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application",

abstract = "In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.",

keywords = "high-speed electrical motor drives, loss calculation, Si IGBT, Si MOSFET, SiC Scottky diode, SiC MOSFET, analytical calculations, simulations, Loss calculation, SiC Schottky diode, Simulations, High-speed electrical motor drives, Analytical calculations",

author = "Giorgo Kapino and Toke Franke",

year = "2019",

month = oct,

day = "10",

doi = "10.1109/CPE.2019.8862397",

language = "English",

booktitle = "2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019",

publisher = "IEEE",

address = "United States",

note = "13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 ; Conference date: 23-04-2019 Through 25-04-2019",

url = "http://www.cpe-powereng.gov",

}

Kapino, G & Franke, T 2019, Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. i 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019, Sønderborg, Danmark, 23/04/2019. https://doi.org/10.1109/CPE.2019.8862397

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. / Kapino, Giorgo; Franke, Toke.
2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 2019.

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

TY - GEN

T1 - Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

AU - Kapino, Giorgo

AU - Franke, Toke

PY - 2019/10/10

Y1 - 2019/10/10

N2 - In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

AB - In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

KW - high-speed electrical motor drives

KW - loss calculation

KW - Si IGBT

KW - Si MOSFET

KW - SiC Scottky diode

KW - SiC MOSFET

KW - analytical calculations

KW - simulations

KW - Loss calculation

KW - SiC Schottky diode

KW - Simulations

KW - High-speed electrical motor drives

KW - Analytical calculations

U2 - 10.1109/CPE.2019.8862397

DO - 10.1109/CPE.2019.8862397

M3 - Article in proceedings

BT - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019

PB - IEEE

T2 - 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019

Y2 - 23 April 2019 through 25 April 2019

ER -

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Abstract

Konference

Dokumenter og links

SDU link

Fingeraftryk

Relaterede projekter

High Speed Drives

Citationsformater