Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Publikation: Bidrag til bog/antologi/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Resumé

In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.
OriginalsprogEngelsk
TitelProceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
ForlagIEEE
Publikationsdato2019
StatusUdgivet - 2019
Begivenhed13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 - University of Southern Denmark, Sønderborg, Danmark
Varighed: 23. apr. 201925. apr. 2019
http://www.cpe-powereng.gov

Konference

Konference13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
LokationUniversity of Southern Denmark
LandDanmark
BySønderborg
Periode23/04/201925/04/2019
Internetadresse

Fingeraftryk

Silicon carbide
Semiconductor materials
Silicon
Insulated gate bipolar transistors (IGBT)
Electric potential
MOSFET devices
Diodes
Topology

Citer dette

Kapino, G., & Franke, T. (2019). Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. I Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 IEEE.
Kapino, Giorgo ; Franke, Toke. / Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 2019.
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title = "Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application",
abstract = "In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.",
keywords = "high-speed electrical motor drives, loss calculation, Si IGBT, Si MOSFET, SiC Scottky diode, SiC MOSFET, analytical calculations, simulations",
author = "Giorgo Kapino and Toke Franke",
year = "2019",
language = "English",
booktitle = "Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019",
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Kapino, G & Franke, T 2019, Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. i Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019, Sønderborg, Danmark, 23/04/2019.

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. / Kapino, Giorgo; Franke, Toke.

Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 2019.

Publikation: Bidrag til bog/antologi/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

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KW - Si IGBT

KW - Si MOSFET

KW - SiC Scottky diode

KW - SiC MOSFET

KW - analytical calculations

KW - simulations

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Kapino G, Franke T. Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. I Proceedings - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE. 2019