Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

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Abstrakt

In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.
OriginalsprogEngelsk
Titel2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
Antal sider5
ForlagIEEE
Publikationsdato10. okt. 2019
ISBN (Elektronisk)978-1-7281-3202-0, 978-1-7281-3201-3, 978-1-7281-3203-7
DOI
StatusUdgivet - 10. okt. 2019
Begivenhed13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 - University of Southern Denmark, Sønderborg, Danmark
Varighed: 23. apr. 201925. apr. 2019
http://www.cpe-powereng.gov

Konference

Konference13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
LokationUniversity of Southern Denmark
LandDanmark
BySønderborg
Periode23/04/201925/04/2019
SponsorIEEE Industrial Electronics Society, The Institute of Electrical and Electronics Engineers (IEEE), Syddansk Universitet
Internetadresse
NavnInternational Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)
ISSN2166-9538

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