Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

S. Sharbati, M. Fathipour

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.
OriginalsprogEngelsk
Titel2009 International Semiconductor Device Research Symposium, ISDRS '09
ForlagIEEE
Publikationsdato2009
Artikelnummer11060188
ISBN (Trykt)978-1-4244-6030-4
ISBN (Elektronisk)978-1-4244-6031-1
DOI
StatusUdgivet - 2009
Udgivet eksterntJa
Begivenhed2009 International Semiconductor Device Research Symposium - College Park, USA
Varighed: 9. dec. 200911. dec. 2009

Konference

Konference2009 International Semiconductor Device Research Symposium
Land/OmrådeUSA
ByCollege Park
Periode09/12/200911/12/2009

Fingeraftryk

Dyk ned i forskningsemnerne om 'Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs'. Sammen danner de et unikt fingeraftryk.

Citationsformater