Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

S. Sharbati; M. Fathipour

doi:10.1109/ISDRS.2009.5378321

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstract

Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

Originalsprog	Engelsk
Titel	2009 International Semiconductor Device Research Symposium, ISDRS '09
Forlag	IEEE
Publikationsdato	2009
Artikelnummer	11060188
ISBN (Trykt)	978-1-4244-6030-4
ISBN (Elektronisk)	978-1-4244-6031-1
DOI	https://doi.org/10.1109/ISDRS.2009.5378321
Status	Udgivet - 2009
Udgivet eksternt	Ja
Begivenhed	2009 International Semiconductor Device Research Symposium - College Park, USA Varighed: 9. dec. 2009 → 11. dec. 2009

Konference

Konference	2009 International Semiconductor Device Research Symposium
Land/Område	USA
By	College Park
Periode	09/12/2009 → 11/12/2009

Dokumenter og links

10.1109/ISDRS.2009.5378321

SDU link

Tjek adgangen til materialet i Syddansk Universitetsbiblioteks søgemaskine

Citationsformater

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title = "Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs",

abstract = "Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.",

author = "S. Sharbati and M. Fathipour",

year = "2009",

doi = "10.1109/ISDRS.2009.5378321",

language = "English",

isbn = "978-1-4244-6030-4",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

publisher = "IEEE",

address = "United States",

note = "2009 International Semiconductor Device Research Symposium ; Conference date: 09-12-2009 Through 11-12-2009",

}

Sharbati, S & Fathipour, M 2009, Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs. i 2009 International Semiconductor Device Research Symposium, ISDRS '09., 11060188, IEEE, 2009 International Semiconductor Device Research Symposium, College Park, Maryland, USA, 09/12/2009. https://doi.org/10.1109/ISDRS.2009.5378321

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs. / Sharbati, S.; Fathipour, M.
2009 International Semiconductor Device Research Symposium, ISDRS '09. IEEE, 2009. 11060188.

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

TY - GEN

T1 - Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

AU - Sharbati, S.

AU - Fathipour, M.

PY - 2009

Y1 - 2009

N2 - Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

AB - Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

U2 - 10.1109/ISDRS.2009.5378321

DO - 10.1109/ISDRS.2009.5378321

M3 - Article in proceedings

SN - 978-1-4244-6030-4

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

PB - IEEE

T2 - 2009 International Semiconductor Device Research Symposium

Y2 - 9 December 2009 through 11 December 2009

ER -

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

Abstract

Konference

Dokumenter og links

SDU link

Fingeraftryk

Citationsformater