In/extrinsic granularity in superconducting boron-doped diamond

B. L. Willems, G. Zhang, J. Vanacken*, V. V. Moshchalkov, I. Guillamon, H. Suderow, S. Vieira, S. D. Janssens, K. Haenen, P. Wagner

*Kontaktforfatter for dette arbejde

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Resumé

When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (pMott∼2×1020cm-3). Under even heavier boron doping (nB∼1021cm-3), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures TC below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

OriginalsprogEngelsk
TidsskriftPhysica C: Superconductivity and its Applications
Vol/bind470
Udgave nummer19
Sider (fra-til)853-856
Antal sider4
ISSN0921-4534
DOI
StatusUdgivet - 1. okt. 2010

Fingeraftryk

Diamond
Boron
Diamonds
boron
diamonds
Transport properties
Chemical vapor deposition
transport properties
Microwaves
Doping (additives)
vapor deposition
Nanodiamonds
Plasmas
microwaves
Thin films
Magnetoresistance
Detonation
inoculation
thin films
detonation

Citer dette

Willems, B. L., Zhang, G., Vanacken, J., Moshchalkov, V. V., Guillamon, I., Suderow, H., ... Wagner, P. (2010). In/extrinsic granularity in superconducting boron-doped diamond. Physica C: Superconductivity and its Applications, 470(19), 853-856. https://doi.org/10.1016/j.physc.2010.02.080
Willems, B. L. ; Zhang, G. ; Vanacken, J. ; Moshchalkov, V. V. ; Guillamon, I. ; Suderow, H. ; Vieira, S. ; Janssens, S. D. ; Haenen, K. ; Wagner, P. / In/extrinsic granularity in superconducting boron-doped diamond. I: Physica C: Superconductivity and its Applications. 2010 ; Bind 470, Nr. 19. s. 853-856.
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abstract = "When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (pMott∼2×1020cm-3). Under even heavier boron doping (nB∼1021cm-3), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures TC below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.",
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Willems, BL, Zhang, G, Vanacken, J, Moshchalkov, VV, Guillamon, I, Suderow, H, Vieira, S, Janssens, SD, Haenen, K & Wagner, P 2010, 'In/extrinsic granularity in superconducting boron-doped diamond', Physica C: Superconductivity and its Applications, bind 470, nr. 19, s. 853-856. https://doi.org/10.1016/j.physc.2010.02.080

In/extrinsic granularity in superconducting boron-doped diamond. / Willems, B. L.; Zhang, G.; Vanacken, J.; Moshchalkov, V. V.; Guillamon, I.; Suderow, H.; Vieira, S.; Janssens, S. D.; Haenen, K.; Wagner, P.

I: Physica C: Superconductivity and its Applications, Bind 470, Nr. 19, 01.10.2010, s. 853-856.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - In/extrinsic granularity in superconducting boron-doped diamond

AU - Willems, B. L.

AU - Zhang, G.

AU - Vanacken, J.

AU - Moshchalkov, V. V.

AU - Guillamon, I.

AU - Suderow, H.

AU - Vieira, S.

AU - Janssens, S. D.

AU - Haenen, K.

AU - Wagner, P.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (pMott∼2×1020cm-3). Under even heavier boron doping (nB∼1021cm-3), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures TC below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

AB - When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (pMott∼2×1020cm-3). Under even heavier boron doping (nB∼1021cm-3), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures TC below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

KW - Boron doped diamond films

KW - Granular films

KW - Superconductor-insulator transition

UR - http://www.scopus.com/inward/record.url?scp=77956179108&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2010.02.080

DO - 10.1016/j.physc.2010.02.080

M3 - Journal article

AN - SCOPUS:77956179108

VL - 470

SP - 853

EP - 856

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - 19

ER -