Hot electron generation via internal surface photo-effect in structures with quantum well

Fedor A. Shuklin*, Igor V. Smetanin, Igor E. Protsenko, Jacob B. Khurgin, Alexander V. Uskov

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Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

It was recently demonstrated in the experiments [1,2] that the internal photoemission efficiency can reach several tens of percents because of "coherent" or, "surface" photoemission. In present work we provide theoretical description of this effect assuming the surface photoemissionin the structureconsisting ofthe Schottky-barrier metal-semiconductor interface with the Quantum Well (QW) inside. We take into account the difference of dielectric permittivities for the metal and the semiconductor which strongly affects the photoemission efficiency. We show that QW inside the Schottky-barrier can lead to (a) lowering the threshold energy of the photoemission due to resonance tunneling of electrons through the intermediate quasi-level of energy in QW; (b) the photoemission efficiency can be increased by several orders of magnitude.

OriginalsprogEngelsk
TitelMetamaterials XII
RedaktørerKevin F. MacDonald, Isabelle Staude, Anatoly V. Zayats
ForlagSPIE - International Society for Optical Engineering
Publikationsdato1. jan. 2020
Artikelnummer113441X
ISBN (Elektronisk)9781510634602
DOI
StatusUdgivet - 1. jan. 2020
BegivenhedMetamaterials XII 2020 - None, Frankrig
Varighed: 6. apr. 202010. apr. 2020

Konference

KonferenceMetamaterials XII 2020
LandFrankrig
ByNone
Periode06/04/202010/04/2020
SponsorCity of Strasbourg, CNRS - The National Center for Scientific Research, et al., Eurometropole, Region Grand Est, The Society of Photo-Optical Instrumentation Engineers (SPIE)
NavnProceedings of SPIE - The International Society for Optical Engineering
Vol/bind11344
ISSN0277-786X

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