Abstract
The demand on broadband near-infrared photodetections with high responsivity is becoming increasingly eminent; however its realization remains a significant technological challenge. Here we design, fabricate, and characterize a broadband Ge photodetector (1000-1600 » nm), composed of densely packed 230-nm-thick Ge disks of different diameters (255 » nm, 320 » nm, and 500 » nm), placed on top of a 105-nm-thin Ge layer. Using experimentally measured and calculated transmission and absorption spectra, we demonstrate that the absorption and detector responsivity are increased by nearly 2 orders of magnitude, compared to the unstructured Ge photodetector, due to the excitation of magnetic dipole resonances in Ge disks, while preserving a relatively low dark current. Our approach is simple and can be easily adapted to other semiconductor material platforms and operation wavelengths to enable performance improvements of broadband photodetector devices.
Originalsprog | Engelsk |
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Tidsskrift | Nanophotonics |
Vol/bind | 12 |
Udgave nummer | 12 |
Sider (fra-til) | 2171-2177 |
ISSN | 2192-8606 |
DOI | |
Status | Udgivet - 11. maj 2023 |
Bibliografisk note
Funding Information:Research funding: V.A.Z. acknowledges financial support from VILLUM FONDEN (Grant 40707).