Experimental Verification of the Power Density Improvement in a GaN Converter with the Enhancement of Layout

Rakesh Ramachandran*, Morten Nymand, Jesper Nielsen

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Abstrakt

Wide bang gap devices, especially GaN devices are promising in the improvement of power density of the converter due to their fast switching speed and their smaller package. The paper presents how the layout change will affect the power density of an isolated dc-dc converter. In this paper, two layout has been analyzed and presented for paralleling of four GaN FETs. Experimental results from the converters with two different layout are presented in this paper. The power rating of the converter has increased from 2 kW to 2.6 kW converter by the optimization of layout. The measured efficiency curve of both the converter is shown in this paper. The maximum measured efficiency of the converter is 98.5% for the 2 kW converter and 98.8% for the 2.6 kW converter. The power density of the converter has increased by 30% with the optimization of the layout.

OriginalsprogEngelsk
TitelProceedings of the 2018 IEEE Vehicle Power and Propulsion Conference (VPPC)
Antal sider5
ForlagIEEE
Publikationsdato2018
ISBN (Trykt)978-1-5386-6204-5
ISBN (Elektronisk)9781538662038
DOI
StatusUdgivet - 2018
Begivenhed2018 IEEE Vehicle Power and Propulsion Conference - Chicago, USA
Varighed: 27. aug. 201830. aug. 2018

Konference

Konference2018 IEEE Vehicle Power and Propulsion Conference
LandUSA
ByChicago
Periode27/08/201830/08/2018
NavnIEEE Vehicle Power and Propulsion Conference (VPPC)
ISSN1938-8756

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Citationsformater

Ramachandran, R., Nymand, M., & Nielsen, J. (2018). Experimental Verification of the Power Density Improvement in a GaN Converter with the Enhancement of Layout. I Proceedings of the 2018 IEEE Vehicle Power and Propulsion Conference (VPPC) IEEE. IEEE Vehicle Power and Propulsion Conference (VPPC) https://doi.org/10.1109/VPPC.2018.8604970