Wide band gap (WBG) semiconductor power devices like silicon carbide (SiC), gallium nitride (GaN) are becoming popular in the development of high performance power electronics converters which are used in ac motor drives, photovoltaic appliances, electric vehicle drive train, switched mode power supplies and grid applications, due to the its superior material properties. This SiC technology is going to replace the already matured silicon (Si) technology in near future. This paper reports the in-house design and development of 10 kVA SiC discrete MOSFET based three phase voltage source inverter. The inverter is switched at different switching frequencies from 5 kHz to 50 kHz. The developed inverter has been tested with 5hp, 415 V, 50 Hz three phase induction motor and its performances have been evaluated at different switching frequencies when driving the induction motor at its rated speed by v/f control technique implemented in floating point DSP processor (TMS320F28335).
|Titel||2017 14th IEEE India Council International Conference, INDICON 2017|
|Publikationsdato||9. okt. 2018|
|Status||Udgivet - 9. okt. 2018|
|Begivenhed||14th IEEE India Council International Conference, INDICON 2017 - Roorkee, Indien|
Varighed: 15. dec. 2017 → 17. dec. 2017
|Konference||14th IEEE India Council International Conference, INDICON 2017|
|Periode||15/12/2017 → 17/12/2017|