Evaluation of All SiC MOSFET Based Voltage Source Inverter with Open Loop Induction Motor

Prasun Mishra, Ramkrishan Maheshwari

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskning

Abstrakt

Wide band gap (WBG) semiconductor power devices like silicon carbide (SiC), gallium nitride (GaN) are becoming popular in the development of high performance power electronics converters which are used in ac motor drives, photovoltaic appliances, electric vehicle drive train, switched mode power supplies and grid applications, due to the its superior material properties. This SiC technology is going to replace the already matured silicon (Si) technology in near future. This paper reports the in-house design and development of 10 kVA SiC discrete MOSFET based three phase voltage source inverter. The inverter is switched at different switching frequencies from 5 kHz to 50 kHz. The developed inverter has been tested with 5hp, 415 V, 50 Hz three phase induction motor and its performances have been evaluated at different switching frequencies when driving the induction motor at its rated speed by v/f control technique implemented in floating point DSP processor (TMS320F28335).

OriginalsprogEngelsk
Titel2017 14th IEEE India Council International Conference, INDICON 2017
Antal sider6
ForlagIEEE
Publikationsdato9. okt. 2018
ISBN (Trykt)978-1-5386-4319-8
ISBN (Elektronisk)978-1-5386-4318-1
DOI
StatusUdgivet - 9. okt. 2018
Udgivet eksterntJa
Begivenhed14th IEEE India Council International Conference, INDICON 2017 - Roorkee, Indien
Varighed: 15. dec. 201717. dec. 2017

Konference

Konference14th IEEE India Council International Conference, INDICON 2017
Land/OmrådeIndien
ByRoorkee
Periode15/12/201717/12/2017

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