Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

Mahdieh Hashemi, Mahmood Hosseini Farzad, N. Asger Mortensen, Sanshui Xiao

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Resumé

Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors.
OriginalsprogEngelsk
TidsskriftPlasmonics
Vol/bind8
Udgave nummer2
Sider (fra-til)1059-1064
ISSN1557-1955
DOI
StatusUdgivet - 2013
Udgivet eksterntJa

Fingeraftryk

Silicon
Photodetectors
Light absorption
Metals
Light Metals
Quantum efficiency
Photons
Hot carriers
Electrons
Infrared radiation
Bandwidth
Substrates

Citer dette

Hashemi, Mahdieh ; Farzad, Mahmood Hosseini ; Mortensen, N. Asger ; Xiao, Sanshui. / Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors. I: Plasmonics. 2013 ; Bind 8, Nr. 2. s. 1059-1064.
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title = "Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors",
abstract = "Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 {\%} of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors.",
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Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors. / Hashemi, Mahdieh; Farzad, Mahmood Hosseini; Mortensen, N. Asger; Xiao, Sanshui.

I: Plasmonics, Bind 8, Nr. 2, 2013, s. 1059-1064.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

AU - Hashemi, Mahdieh

AU - Farzad, Mahmood Hosseini

AU - Mortensen, N. Asger

AU - Xiao, Sanshui

PY - 2013

Y1 - 2013

N2 - Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors.

AB - Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors.

U2 - 10.1007/s11468-013-9509-y

DO - 10.1007/s11468-013-9509-y

M3 - Journal article

VL - 8

SP - 1059

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SN - 1557-1955

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