Electronic properties of graphene antidot lattices

Joachim Alexander Fürst, Jesper Goor Pedersen, C. Flindt, Asger Mortensen, Mads Brandbyge, T.G. Pedersen, Antti-Pekka Jauho

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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Resumé

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.
OriginalsprogEngelsk
TidsskriftNew Journal of Physics
Vol/bind11
Sider (fra-til)095020
ISSN1367-2630
DOI
StatusUdgivet - 2009
Udgivet eksterntJa

Fingeraftryk

graphene
electronics
density functional theory
metalloids
Dirac equation
passivity
optical properties
causes
hydrogen
predictions

Citer dette

Fürst, J. A., Pedersen, J. G., Flindt, C., Mortensen, A., Brandbyge, M., Pedersen, T. G., & Jauho, A-P. (2009). Electronic properties of graphene antidot lattices. New Journal of Physics, 11, 095020. https://doi.org/10.1088/1367-2630/11/9/095020
Fürst, Joachim Alexander ; Pedersen, Jesper Goor ; Flindt, C. ; Mortensen, Asger ; Brandbyge, Mads ; Pedersen, T.G. ; Jauho, Antti-Pekka. / Electronic properties of graphene antidot lattices. I: New Journal of Physics. 2009 ; Bind 11. s. 095020.
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title = "Electronic properties of graphene antidot lattices",
abstract = "Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.",
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Fürst, JA, Pedersen, JG, Flindt, C, Mortensen, A, Brandbyge, M, Pedersen, TG & Jauho, A-P 2009, 'Electronic properties of graphene antidot lattices', New Journal of Physics, bind 11, s. 095020. https://doi.org/10.1088/1367-2630/11/9/095020

Electronic properties of graphene antidot lattices. / Fürst, Joachim Alexander; Pedersen, Jesper Goor; Flindt, C.; Mortensen, Asger; Brandbyge, Mads; Pedersen, T.G.; Jauho, Antti-Pekka.

I: New Journal of Physics, Bind 11, 2009, s. 095020.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Electronic properties of graphene antidot lattices

AU - Fürst, Joachim Alexander

AU - Pedersen, Jesper Goor

AU - Flindt, C.

AU - Mortensen, Asger

AU - Brandbyge, Mads

AU - Pedersen, T.G.

AU - Jauho, Antti-Pekka

PY - 2009

Y1 - 2009

N2 - Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.

AB - Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.

U2 - 10.1088/1367-2630/11/9/095020

DO - 10.1088/1367-2630/11/9/095020

M3 - Journal article

VL - 11

SP - 095020

JO - New Journal of Physics

JF - New Journal of Physics

SN - 1367-2630

ER -