Effect investigations of double pulse test on the wide bandgap power devices

Jian Zhi Fu*, Giorgo Kapino, Wulf Toke Franke

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Abstrakt

This paper addresses the investigations of the probe depending effects on the dynamic characteristics for a commercial SiC MOSFET. A double pulse test with a clamped inductive load has been used for the analysis on the switching behaviors of the devices under test (DUT). Then these switching characteristics are investigated under different voltage and current measurements in order to define a standard measurement guideline for the final test setup. In this paper, a 1,2kV SiC MOSFET is evaluated in terms of turn on and turn off voltage and current measurement.

OriginalsprogEngelsk
TitelPCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020
ForlagMesago PCIM GmbH
Publikationsdato2020
Sider1202-1207
ISBN (Trykt)9783800752454
StatusUdgivet - 2020
BegivenhedInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020 - Virtual, Online
Varighed: 7. jul. 20208. jul. 2020

Konference

KonferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020
ByVirtual, Online
Periode07/07/202008/07/2020
NavnPCIM Europe Conference Proceedings
Vol/bind1

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