Direct patterning of nitrogen-doped chemical vapor deposited graphene-based microstructures for charge carrier measurements employing femtosecond laser ablation

Nikolai G. Kovalchuk, Kiryl A. Niherysh, Andrei V. Felsharuk, Ivan A. Svito, Tomas Tamulevičius, Sigitas Tamulevičius, Nikolai I. Kargin, Ivan V. Komissarov, Serghej L. Prischepa

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Abstrakt

Chemical vapor deposited nitrogen-doped graphene, transferred onto a SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm-2 fluence, 96% pulse overlap, and a scanning speed of 100 mm s-1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron and atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.

OriginalsprogEngelsk
Artikelnummer30LT01
TidsskriftJournal of Physics D: Applied Physics
Vol/bind52
Udgave nummer30
Antal sider8
ISSN0022-3727
DOI
StatusUdgivet - 22. maj 2019
Udgivet eksterntJa

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