Direct patterning of nitrogen-doped chemical vapor deposited graphene-based microstructures for charge carrier measurements employing femtosecond laser ablation

Nikolai G. Kovalchuk, Kiryl A. Niherysh, Andrei V. Felsharuk, Ivan A. Svito, Tomas Tamulevičius, Sigitas Tamulevičius, Nikolai I. Kargin, Ivan V. Komissarov, Serghej L. Prischepa

Publikation: Bidrag til tidsskriftLetterForskningpeer review

Resumé

Chemical vapor deposited nitrogen-doped graphene, transferred onto a SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm-2 fluence, 96% pulse overlap, and a scanning speed of 100 mm s-1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron and atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.

OriginalsprogEngelsk
Artikelnummer30LT01
TidsskriftJournal of Physics D: Applied Physics
Vol/bind52
Udgave nummer30
Antal sider8
ISSN0022-3727
DOI
StatusUdgivet - 22. maj 2019

Fingeraftryk

Graphite
Laser ablation
Ultrashort pulses
Charge carriers
Graphene
laser ablation
charge carriers
graphene
Nitrogen
Vapors
vapors
nitrogen
microstructure
Microstructure
Lasers
Substrates
lasers
Scanning
Galvanomagnetic effects
laser machining

Citer dette

Kovalchuk, Nikolai G. ; Niherysh, Kiryl A. ; Felsharuk, Andrei V. ; Svito, Ivan A. ; Tamulevičius, Tomas ; Tamulevičius, Sigitas ; Kargin, Nikolai I. ; Komissarov, Ivan V. ; Prischepa, Serghej L. / Direct patterning of nitrogen-doped chemical vapor deposited graphene-based microstructures for charge carrier measurements employing femtosecond laser ablation. I: Journal of Physics D: Applied Physics. 2019 ; Bind 52, Nr. 30.
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abstract = "Chemical vapor deposited nitrogen-doped graphene, transferred onto a SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm-2 fluence, 96{\%} pulse overlap, and a scanning speed of 100 mm s-1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron and atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.",
keywords = "charge carrier concentration, femtosecond laser ablation, Hall resistance, nitrogen doped graphene",
author = "Kovalchuk, {Nikolai G.} and Niherysh, {Kiryl A.} and Felsharuk, {Andrei V.} and Svito, {Ivan A.} and Tomas Tamulevičius and Sigitas Tamulevičius and Kargin, {Nikolai I.} and Komissarov, {Ivan V.} and Prischepa, {Serghej L.}",
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Direct patterning of nitrogen-doped chemical vapor deposited graphene-based microstructures for charge carrier measurements employing femtosecond laser ablation. / Kovalchuk, Nikolai G.; Niherysh, Kiryl A.; Felsharuk, Andrei V.; Svito, Ivan A.; Tamulevičius, Tomas; Tamulevičius, Sigitas; Kargin, Nikolai I.; Komissarov, Ivan V.; Prischepa, Serghej L.

I: Journal of Physics D: Applied Physics, Bind 52, Nr. 30, 30LT01, 22.05.2019.

Publikation: Bidrag til tidsskriftLetterForskningpeer review

TY - JOUR

T1 - Direct patterning of nitrogen-doped chemical vapor deposited graphene-based microstructures for charge carrier measurements employing femtosecond laser ablation

AU - Kovalchuk, Nikolai G.

AU - Niherysh, Kiryl A.

AU - Felsharuk, Andrei V.

AU - Svito, Ivan A.

AU - Tamulevičius, Tomas

AU - Tamulevičius, Sigitas

AU - Kargin, Nikolai I.

AU - Komissarov, Ivan V.

AU - Prischepa, Serghej L.

PY - 2019/5/22

Y1 - 2019/5/22

N2 - Chemical vapor deposited nitrogen-doped graphene, transferred onto a SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm-2 fluence, 96% pulse overlap, and a scanning speed of 100 mm s-1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron and atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.

AB - Chemical vapor deposited nitrogen-doped graphene, transferred onto a SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm-2 fluence, 96% pulse overlap, and a scanning speed of 100 mm s-1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron and atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.

KW - charge carrier concentration

KW - femtosecond laser ablation

KW - Hall resistance

KW - nitrogen doped graphene

U2 - 10.1088/1361-6463/ab1c4b

DO - 10.1088/1361-6463/ab1c4b

M3 - Letter

AN - SCOPUS:85070084395

VL - 52

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 30

M1 - 30LT01

ER -