Abstract
We present a general method for combining two crystals into an interface. The method finds all possible interfaces between the crystals with small coincidence cells and identifies the strain and area of the corresponding two-dimensional cells of the two crystal surfaces. We apply the method to the two semiconductor alloys InAs1-xSbx and GaxIn1-xAs combined with a selection of pure metals or with NbTiN to create semiconductor/superconductor interfaces. The lattice constant of the alloy can be tuned by composition and we can extract the alloy lattice parameters corresponding to zero strain in both the metal and the alloy. The results can be used to suggest new epitaxially matched interfaces between two materials.
| Originalsprog | Engelsk |
|---|---|
| Artikelnummer | 085306 |
| Tidsskrift | Physical Review B |
| Vol/bind | 96 |
| Udgave nummer | 8 |
| ISSN | 2469-9950 |
| DOI | |
| Status | Udgivet - 22. aug. 2017 |
| Udgivet eksternt | Ja |
Bibliografisk note
Funding Information:The authors acknowledges support from Innovation Fund Denmark under Project No. 5189-00082B “Atomic-scale modeling of interfaces” and the Quantum Innovation Center (QUBIZ), Innovation Fund Denmark, and from the European Commissions Seventh Framework Programme (FP7/20072013), Grant Agreement IIIV-MOS Project No. 619326. We would like to thank Jesper Nygård and Thomas Sand Jespersen of the CQD at Copenhagen University for suggesting the idea of investigating semiconductor alloys, as well as Søren Smidstrup at QuantumWise A/S for the discussions and the help during the practical implementation of the matching method.
Publisher Copyright:
© 2017 American Physical Society.