Design of high breakdown voltage GaN-based vertical HFETs by the stepped p-Gan buried buffer layers

Samaneh Sharbati*, Samir A.Abdelrehim, Thomas Ebel, Toke Franke

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Publikation: Konferencebidrag uden forlag/tidsskriftPaperForskningpeer review

Abstrakt

In this work, a new design of a GaN current aperture vertical electron transistor (CAVET) by stepped p-Gan buried layers with modulated doping concentration is proposed. During the Off state of the operation, the p-GaN buried layers are reverse biased which results in a fully depleted drift layer and consequently a significant improvement of breakdown voltage. By adjusting the length and the thickness of the buried layers, it’s possible to make a uniform electric field through the device. Moreover, adjusting the doping concentrations in the buried layers can optimize the electric field distribution in the drift layer. This approach proposes a new vertical GaN FET which has higher breakdown voltage and lower resistance compared to their current counterpart devices.
OriginalsprogEngelsk
Publikationsdato19. jun. 2022
StatusAccepteret/In press - 19. jun. 2022

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