Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter

Alireza Kouchaki, Giorgo Kapino, Morten Nymand

Publikation: Bidrag til bog/antologi/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Resumé

This paper presents design and implementation of a three-level hybrid active neutral point clamped (3L-ANPC) inverter using Gallium-Nitride (GaN) switches. This paper shows a modest usage of wide band gap (WBG) devices for achieving a high frequency converter. The ANPC benefits from hybrid modulation in which only two switches out of 6 active switches are modulating with high frequency (HF, carrier frequency) and the rest are switching with the reference frequency or low frequency (LF). Therefore, WBG switches can be utilized for these two HF switches. In this paper, gallium-nitride (GaN) FETs have been used for the HF switches. Two different switch technologies plus two different modulation schemes have introduced a hybrid 3L-ANPC. The semiconductor losses are calculated and modified with respect to the switch technologies. A three-phase 10 kW hybrid 3L-ANPC is designed using two 650 V GaN-FETs and four 650 V Si-MOSFETs for each phase. The switching frequency of the GaN-FETs is optimized to be at 100kHz. Different modulation schemes are implemented in the FPGA of a dSPACE device and the converter is tested at various conditions.

OriginalsprogEngelsk
TitelProceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe
Antal sider10
ForlagIEEE
Publikationsdato30. okt. 2018
ISBN (Trykt)978-1-5386-4145-3
ISBN (Elektronisk)978-9-0758-1528-3, 978-9-0758-1529-0
StatusUdgivet - 30. okt. 2018
Begivenhed20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe - Riga, Letland
Varighed: 17. sep. 201821. sep. 2018

Konference

Konference20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe
LandLetland
ByRiga
Periode17/09/201821/09/2018

Fingeraftryk

Switches
Gallium nitride
Field effect transistors
Modulation
Energy gap
Frequency converters
Switching frequency
Field programmable gate arrays (FPGA)
Semiconductor materials

Citer dette

Kouchaki, A., Kapino, G., & Nymand, M. (2018). Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter. I Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe IEEE.
Kouchaki, Alireza ; Kapino, Giorgo ; Nymand, Morten. / Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter. Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe. IEEE, 2018.
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title = "Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter",
abstract = "This paper presents design and implementation of a three-level hybrid active neutral point clamped (3L-ANPC) inverter using Gallium-Nitride (GaN) switches. This paper shows a modest usage of wide band gap (WBG) devices for achieving a high frequency converter. The ANPC benefits from hybrid modulation in which only two switches out of 6 active switches are modulating with high frequency (HF, carrier frequency) and the rest are switching with the reference frequency or low frequency (LF). Therefore, WBG switches can be utilized for these two HF switches. In this paper, gallium-nitride (GaN) FETs have been used for the HF switches. Two different switch technologies plus two different modulation schemes have introduced a hybrid 3L-ANPC. The semiconductor losses are calculated and modified with respect to the switch technologies. A three-phase 10 kW hybrid 3L-ANPC is designed using two 650 V GaN-FETs and four 650 V Si-MOSFETs for each phase. The switching frequency of the GaN-FETs is optimized to be at 100kHz. Different modulation schemes are implemented in the FPGA of a dSPACE device and the converter is tested at various conditions.",
keywords = "High frequency power converter, Modulation strategy, Multilevel converters, Pulse Width Modulation (PWM, Voltage Source Converter (VSC), Wide bandgap devices",
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Kouchaki, A, Kapino, G & Nymand, M 2018, Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter. i Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe. IEEE, 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, Riga, Letland, 17/09/2018.

Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter. / Kouchaki, Alireza; Kapino, Giorgo; Nymand, Morten.

Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe. IEEE, 2018.

Publikation: Bidrag til bog/antologi/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

TY - GEN

T1 - Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter

AU - Kouchaki, Alireza

AU - Kapino, Giorgo

AU - Nymand, Morten

PY - 2018/10/30

Y1 - 2018/10/30

N2 - This paper presents design and implementation of a three-level hybrid active neutral point clamped (3L-ANPC) inverter using Gallium-Nitride (GaN) switches. This paper shows a modest usage of wide band gap (WBG) devices for achieving a high frequency converter. The ANPC benefits from hybrid modulation in which only two switches out of 6 active switches are modulating with high frequency (HF, carrier frequency) and the rest are switching with the reference frequency or low frequency (LF). Therefore, WBG switches can be utilized for these two HF switches. In this paper, gallium-nitride (GaN) FETs have been used for the HF switches. Two different switch technologies plus two different modulation schemes have introduced a hybrid 3L-ANPC. The semiconductor losses are calculated and modified with respect to the switch technologies. A three-phase 10 kW hybrid 3L-ANPC is designed using two 650 V GaN-FETs and four 650 V Si-MOSFETs for each phase. The switching frequency of the GaN-FETs is optimized to be at 100kHz. Different modulation schemes are implemented in the FPGA of a dSPACE device and the converter is tested at various conditions.

AB - This paper presents design and implementation of a three-level hybrid active neutral point clamped (3L-ANPC) inverter using Gallium-Nitride (GaN) switches. This paper shows a modest usage of wide band gap (WBG) devices for achieving a high frequency converter. The ANPC benefits from hybrid modulation in which only two switches out of 6 active switches are modulating with high frequency (HF, carrier frequency) and the rest are switching with the reference frequency or low frequency (LF). Therefore, WBG switches can be utilized for these two HF switches. In this paper, gallium-nitride (GaN) FETs have been used for the HF switches. Two different switch technologies plus two different modulation schemes have introduced a hybrid 3L-ANPC. The semiconductor losses are calculated and modified with respect to the switch technologies. A three-phase 10 kW hybrid 3L-ANPC is designed using two 650 V GaN-FETs and four 650 V Si-MOSFETs for each phase. The switching frequency of the GaN-FETs is optimized to be at 100kHz. Different modulation schemes are implemented in the FPGA of a dSPACE device and the converter is tested at various conditions.

KW - High frequency power converter

KW - Modulation strategy

KW - Multilevel converters

KW - Pulse Width Modulation (PWM

KW - Voltage Source Converter (VSC)

KW - Wide bandgap devices

M3 - Article in proceedings

SN - 978-1-5386-4145-3

BT - Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe

PB - IEEE

ER -

Kouchaki A, Kapino G, Nymand M. Design of a High Frequency 3-Phase 3-Level Hybrid Active-NPC Inverter. I Proceedings of the 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe. IEEE. 2018