@inproceedings{f6a470124227487eb39cfda554ce7471,
title = "Design of a compact, ultra high efficient isolated DC-DC converter utilizing GaN devices",
abstract = "Wide band gap semiconductor devices have a promising future in various power converter applications due to their higher performance characteristics such as high frequency, high voltage and high operating temperature. For power switching applications, wide band gap materials mainly Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are attractive. In this paper, the detailed design analysis for an ultra-high efficient (about 99\%), 1.7 kW, 50 kHz, 130V to 48V isolated dc-dc converter along with the prototype model is presented and discussed. The converter is designed with a synchronous rectifier stage for efficiency improvement. Furthermore, it discusses the usage of gallium nitride switches in power converter application to improve the overall converter efficiency.",
keywords = "Dc-dc power converters, Gallium nitride, High efficiency, Silicon carbide, Transformer, Wide band gap devices",
author = "Rakesh Ramachandran and Morten Nymand and Petersen, \{Niels. H\}",
year = "2014",
doi = "10.1109/IECON.2014.7049142",
language = "English",
isbn = "978-1-4799-4032-5",
series = "Proceedings of the Annual Conference of the IEEE Industrial Electronics Society",
publisher = "IEEE Press",
pages = "4256 -- 4261",
booktitle = "Proceedings of the 40th Annual Conference of the IEEE Industrial Electronics Society",
note = "40th IEEE Annual Conference of the Industrial Electronics Society ; Conference date: 29-10-2014 Through 01-11-2014",
}