Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

Jesper Nielsen*, Rakesh Ramachandran, Morten Nymand

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Abstrakt

This paper presents design and layout considerations for a high efficient GaN converter on two-layer cost-effective PCB. The fast switching capabilities of GaN FETs requires very low power loop inductance. The proposed method of embedding the input capacitors to minimize loop inductance is analyzed and tested on a non-isolated buck converter using GaN switches. Ultra low power loop inductance (418 pH) was achieved by placing the bypass capacitors vertically through the board. The proposed converter has reached a maximum measured conversion efficiency of 98.6 percentage in both buck and boost mode.

OriginalsprogEngelsk
Titel2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Antal sider6
ForlagIEEE
Publikationsdato6. sep. 2021
ISBN (Elektronisk)978-9-0758-1537-5
StatusUdgivet - 6. sep. 2021
Begivenhed23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe - Ghent, Belgien
Varighed: 6. sep. 202110. sep. 2021

Konference

Konference23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Land/OmrådeBelgien
ByGhent
Periode06/09/202110/09/2021

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