Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

Jesper Nielsen; Rakesh Ramachandran; Morten Nymand

Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

Jesper Nielsen^*, Rakesh Ramachandran, Morten Nymand

^*Kontaktforfatter

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstract

This paper presents design and layout considerations for a high efficient GaN converter on two-layer cost-effective PCB. The fast switching capabilities of GaN FETs requires very low power loop inductance. The proposed method of embedding the input capacitors to minimize loop inductance is analyzed and tested on a non-isolated buck converter using GaN switches. Ultra low power loop inductance (418 pH) was achieved by placing the bypass capacitors vertically through the board. The proposed converter has reached a maximum measured conversion efficiency of 98.6 percentage in both buck and boost mode.

Originalsprog	Engelsk
Titel	2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Antal sider	6
Forlag	IEEE
Publikationsdato	6. sep. 2021
ISBN (Elektronisk)	978-9-0758-1537-5
Status	Udgivet - 6. sep. 2021
Begivenhed	23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe - Ghent, Belgien Varighed: 6. sep. 2021 → 10. sep. 2021

Konference

Konference	23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Land/Område	Belgien
By	Ghent
Periode	06/09/2021 → 10/09/2021

Dokumenter og links

https://ieeexplore.ieee.org/document/9570645

Citationsformater

@inproceedings{17db999f9f12477c87deb19849cb1766,

title = "Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors",

abstract = "This paper presents design and layout considerations for a high efficient GaN converter on two-layer cost-effective PCB. The fast switching capabilities of GaN FETs requires very low power loop inductance. The proposed method of embedding the input capacitors to minimize loop inductance is analyzed and tested on a non-isolated buck converter using GaN switches. Ultra low power loop inductance (418 pH) was achieved by placing the bypass capacitors vertically through the board. The proposed converter has reached a maximum measured conversion efficiency of 98.6 percentage in both buck and boost mode.",

keywords = "dc-dc Converter, Efficiency, Finiteelement analysis, Gallium Nitride (GaN), Optimization, Parasitic inductance",

author = "Jesper Nielsen and Rakesh Ramachandran and Morten Nymand",

year = "2021",

month = sep,

day = "6",

language = "English",

booktitle = "2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe",

publisher = "IEEE",

address = "United States",

note = "23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe ; Conference date: 06-09-2021 Through 10-09-2021",

}

Nielsen, J, Ramachandran, R & Nymand, M 2021, Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors. i 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe. IEEE, 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, Ghent, Belgien, 06/09/2021. <https://ieeexplore.ieee.org/document/9570645>

Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors. / Nielsen, Jesper; Ramachandran, Rakesh; Nymand, Morten.
2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe. IEEE, 2021.

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

TY - GEN

T1 - Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

AU - Nielsen, Jesper

AU - Ramachandran, Rakesh

AU - Nymand, Morten

PY - 2021/9/6

Y1 - 2021/9/6

N2 - This paper presents design and layout considerations for a high efficient GaN converter on two-layer cost-effective PCB. The fast switching capabilities of GaN FETs requires very low power loop inductance. The proposed method of embedding the input capacitors to minimize loop inductance is analyzed and tested on a non-isolated buck converter using GaN switches. Ultra low power loop inductance (418 pH) was achieved by placing the bypass capacitors vertically through the board. The proposed converter has reached a maximum measured conversion efficiency of 98.6 percentage in both buck and boost mode.

AB - This paper presents design and layout considerations for a high efficient GaN converter on two-layer cost-effective PCB. The fast switching capabilities of GaN FETs requires very low power loop inductance. The proposed method of embedding the input capacitors to minimize loop inductance is analyzed and tested on a non-isolated buck converter using GaN switches. Ultra low power loop inductance (418 pH) was achieved by placing the bypass capacitors vertically through the board. The proposed converter has reached a maximum measured conversion efficiency of 98.6 percentage in both buck and boost mode.

KW - dc-dc Converter

KW - Efficiency

KW - Finiteelement analysis

KW - Gallium Nitride (GaN)

KW - Optimization

KW - Parasitic inductance

M3 - Article in proceedings

AN - SCOPUS:85119051459

BT - 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe

PB - IEEE

T2 - 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe

Y2 - 6 September 2021 through 10 September 2021

ER -

Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

Abstract

Konference

Dokumenter og links

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Citationsformater