Defect-induced shift of the Peierls transition in TTF-TCNQ thin films

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Resumé

In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene- tetracyanoquinodimethane (TTF-TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF-TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF-TCNQ thin films during the growth process.
OriginalsprogEngelsk
TidsskriftSynthetic Metals
Vol/bind161
Udgave nummer11-12
Sider (fra-til)976-983
ISSN0379-6779
DOI
StatusUdgivet - 2011

Fingeraftryk

Thin films
Defects
Superconducting transition temperature
shift
defects
thin films
transition temperature
Physical vapor deposition
Substrates
Film thickness
film thickness
Single crystals
vapor deposition
single crystals
tetrathiafulvalene
tetracyanoquinodimethane

Citer dette

@article{9aa865e6380f499cb1ab230df1a36407,
title = "Defect-induced shift of the Peierls transition in TTF-TCNQ thin films",
abstract = "In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene- tetracyanoquinodimethane (TTF-TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF-TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF-TCNQ thin films during the growth process.",
author = "Vita Solovyeva and M. Huth",
year = "2011",
doi = "10.1016/j.synthmet.2011.03.003",
language = "English",
volume = "161",
pages = "976--983",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier",
number = "11-12",

}

Defect-induced shift of the Peierls transition in TTF-TCNQ thin films. / Solovyeva, Vita; Huth, M.

I: Synthetic Metals, Bind 161, Nr. 11-12, 2011, s. 976-983.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Defect-induced shift of the Peierls transition in TTF-TCNQ thin films

AU - Solovyeva, Vita

AU - Huth, M.

PY - 2011

Y1 - 2011

N2 - In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene- tetracyanoquinodimethane (TTF-TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF-TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF-TCNQ thin films during the growth process.

AB - In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene- tetracyanoquinodimethane (TTF-TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF-TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF-TCNQ thin films during the growth process.

UR - http://www.scopus.com/inward/record.url?scp=79957943686&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2011.03.003

DO - 10.1016/j.synthmet.2011.03.003

M3 - Journal article

VL - 161

SP - 976

EP - 983

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 11-12

ER -