Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

André Luis Fernandes Cauduro, Roberto dos Reis, Gong Chen, Andreas K. Schmid, Christophe Méthivier, Horst-Günter Rubahn, Léo Bossard-Giannesini, Hervé Cruguel, Nadine Witkowski, Morten Madsen

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Resumé

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.
OriginalsprogEngelsk
TidsskriftACS Applied Materials and Interfaces
Vol/bind9
Udgave nummer8
Sider (fra-til)7717-7724
ISSN1944-8244
DOI
StatusUdgivet - 2017

Fingeraftryk

Molybdenum oxide
Optoelectronic devices
Oxide films
Crystalline materials
Thin films
Reactive sputtering
Surface defects
Crystallization
Electronic properties
Transport properties
Electron microscopy
Charge transfer
Tuning
Metals
Spectroscopy
Annealing
Defects
Microstructure
molybdenum trioxide

Citer dette

Fernandes Cauduro, André Luis ; dos Reis, Roberto ; Chen, Gong ; K. Schmid, Andreas ; Méthivier, Christophe ; Rubahn, Horst-Günter ; Bossard-Giannesini, Léo ; Cruguel, Hervé ; Witkowski, Nadine ; Madsen, Morten. / Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices. I: ACS Applied Materials and Interfaces. 2017 ; Bind 9, Nr. 8. s. 7717-7724.
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title = "Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices",
abstract = "The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.",
author = "{Fernandes Cauduro}, {Andr{\'e} Luis} and {dos Reis}, Roberto and Gong Chen and {K. Schmid}, Andreas and Christophe M{\'e}thivier and Horst-G{\"u}nter Rubahn and L{\'e}o Bossard-Giannesini and Herv{\'e} Cruguel and Nadine Witkowski and Morten Madsen",
year = "2017",
doi = "10.1021/acsami.6b14228",
language = "English",
volume = "9",
pages = "7717--7724",
journal = "A C S Applied Materials and Interfaces",
issn = "1944-8244",
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Fernandes Cauduro, AL, dos Reis, R, Chen, G, K. Schmid, A, Méthivier, C, Rubahn, H-G, Bossard-Giannesini, L, Cruguel, H, Witkowski, N & Madsen, M 2017, 'Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices', ACS Applied Materials and Interfaces, bind 9, nr. 8, s. 7717-7724. https://doi.org/10.1021/acsami.6b14228

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices. / Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong ; K. Schmid, Andreas ; Méthivier, Christophe; Rubahn, Horst-Günter; Bossard-Giannesini, Léo; Cruguel, Hervé; Witkowski, Nadine; Madsen, Morten.

I: ACS Applied Materials and Interfaces, Bind 9, Nr. 8, 2017, s. 7717-7724.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

AU - Fernandes Cauduro, André Luis

AU - dos Reis, Roberto

AU - Chen, Gong

AU - K. Schmid, Andreas

AU - Méthivier, Christophe

AU - Rubahn, Horst-Günter

AU - Bossard-Giannesini, Léo

AU - Cruguel, Hervé

AU - Witkowski, Nadine

AU - Madsen, Morten

PY - 2017

Y1 - 2017

N2 - The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.

AB - The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.

U2 - 10.1021/acsami.6b14228

DO - 10.1021/acsami.6b14228

M3 - Journal article

C2 - 28165215

VL - 9

SP - 7717

EP - 7724

JO - A C S Applied Materials and Interfaces

JF - A C S Applied Materials and Interfaces

SN - 1944-8244

IS - 8

ER -