Crystal orientation effects on wurtzite quantum well electromechanical fields

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Abstrakt

A one-dimensional continuum model for calculating strain and electric field in wurtzite semiconductor heterostructures with arbitrary crystal orientation is presented and applied to GaN/AlGaN and ZnO/MgZnO heterostructure combinations. The model is self-consistent involving feedback couplings of spontaneous polarization, strain, and electric field. Significant differences between fully coupled and semicoupled models are found for the longitudinal and shear-strain components as a function of the crystal-growth direction. In particular, we find that the semicoupled model, typically used in the literature for semiconductors, is inaccurate for ZnO/MgZnO heterostructures where shear-strain components play an important role. An interesting observation is that a growth direction apart from [1̅ 21̅ 0] exists for which the electric field in the quantum well region becomes zero. This is important for, e.g., optimization of light-emitting-diode quantum efficiency.
OriginalsprogEngelsk
TidsskriftPhysical Review B (Condensed Matter and Materials Physics)
Vol/bind82
Udgave nummer20
Sider (fra-til)205303
Antal sider8
ISSN2469-9969
DOI
StatusUdgivet - 2010

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