Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement

Jianzhi Fu; Walid Mansour; Giorgo Kapino; Thomas Ebel; Toke Franke

doi:10.1109/APEC42165.2021.9487203

Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement

Jianzhi Fu^*, Walid Mansour, Giorgo Kapino, Thomas Ebel, Toke Franke

^*Kontaktforfatter

Syddansk Universitet

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstract

In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V SD -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures

Originalsprog	Engelsk
Titel	2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
Forlag	IEEE
Publikationsdato	2021
Sider	2224-2228
ISBN (Elektronisk)	978-1-7281-8949-9
DOI	https://doi.org/10.1109/APEC42165.2021.9487203
Status	Udgivet - 2021
Begivenhed	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Virtual, Online, USA Varighed: 14. jun. 2021 → 17. jun. 2021

Konference

Konference	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Land/Område	USA
By	Virtual, Online
Periode	14/06/2021 → 17/06/2021
Sponsor	IEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC) Proceedings
ISSN	1048-2334

Bibliografisk note

Funding Information:
ACKNOWLEDGMENT This work was supported by Interreg Deutschland-Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu

Funding Information:
This work was supported by Interreg Deutschland- Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu

Publisher Copyright:
© 2021 IEEE.

Dokumenter og links

10.1109/APEC42165.2021.9487203

SDU link

Tjek adgangen til materialet i Syddansk Universitetsbiblioteks søgemaskine

Citationsformater

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title = "Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement",

abstract = "In this paper, the body diode{\textquoteright}s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V SD -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures",

keywords = "Bipolar degradation, Body-diode, SiC MOSFET",

author = "Jianzhi Fu and Walid Mansour and Giorgo Kapino and Thomas Ebel and Toke Franke",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by Interreg Deutschland-Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu Funding Information: This work was supported by Interreg Deutschland- Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu Publisher Copyright: {\textcopyright} 2021 IEEE.; 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 ; Conference date: 14-06-2021 Through 17-06-2021",

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doi = "10.1109/APEC42165.2021.9487203",

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Fu, J, Mansour, W, Kapino, G, Ebel, T & Franke, T 2021, Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement. i 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, IEEE Applied Power Electronics Conference and Exposition (APEC) Proceedings, s. 2224-2228, 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021, Virtual, Online, USA, 14/06/2021. https://doi.org/10.1109/APEC42165.2021.9487203

Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement. / Fu, Jianzhi; Mansour, Walid; Kapino, Giorgo et al.
2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2021. s. 2224-2228 (IEEE Applied Power Electronics Conference and Exposition (APEC) Proceedings).

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

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AU - Fu, Jianzhi

AU - Mansour, Walid

AU - Kapino, Giorgo

AU - Ebel, Thomas

AU - Franke, Toke

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by Interreg Deutschland-Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu Funding Information: This work was supported by Interreg Deutschland- Denmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu Publisher Copyright: © 2021 IEEE.

PY - 2021

Y1 - 2021

N2 - In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V SD -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures

AB - In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V SD -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures

KW - Bipolar degradation

KW - Body-diode

KW - SiC MOSFET

U2 - 10.1109/APEC42165.2021.9487203

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M3 - Article in proceedings

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BT - 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE

T2 - 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021

Y2 - 14 June 2021 through 17 June 2021

ER -

Fu J, Mansour W, Kapino G, Ebel T, Franke T. Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement. I 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE. 2021. s. 2224-2228. (IEEE Applied Power Electronics Conference and Exposition (APEC) Proceedings). doi: 10.1109/APEC42165.2021.9487203

Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement

Abstract

Konference

Bibliografisk note

Dokumenter og links

SDU link

Fingeraftryk

Citationsformater