The Si L//2//,//3VV Auger electron spectrum, produced by electron bombardment, was recorded after progressive Ar** plus ion bombardments of an initially perfect Si(111) surface. Ion currents of about 1-10 mu A at 3 keV were used. Changes in the shape of the spectrum are observed which can be related to structural changes of the surface, as detected by low energy electron diffraction (LEED). At low ion doses ( similar 10**1**5-10**1**6 cm** minus **2) the main effect is removal of intensity in spectral ranges with origin in the ordered Si(111) 7 multiplied by 7 surface structure. Larger doses ( similar 10**1**7 cm** minus **2) produce a markedly altered Auger spectrum.