Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence

Wei Gan, Christos Tserkezis, Qiran Cai, Alexey Falin, Srikanth Mateti, Minh Nguyen, Igor Aharonovich, Kenji Watanabe, Takashi Taniguchi, Fumin Huang, Li Song, Lingxue Kong, Ying Chen, Lu Hua Li*

*Kontaktforfatter for dette arbejde

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Resumé

Metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a sub-nanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ∼95 ± 5), sensitivity (10 -8 M), reproducibility, and reusability (∼90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

OriginalsprogEngelsk
TidsskriftACS Nano
Vol/bind13
Udgave nummer10
Sider (fra-til)12184-12191
ISSN1936-0851
DOI
StatusUdgivet - 22. okt. 2019

Fingeraftryk

Boron nitride
boron nitrides
spacers
Fluorophores
Metals
Fluorescence
fluorescence
Reusability
metals
Thickness control
Defects
Dielectric films
augmentation
defects
rhodamine
affinity
Luminescence
Thermodynamic stability
thermal stability
industries

Citer dette

Gan, W., Tserkezis, C., Cai, Q., Falin, A., Mateti, S., Nguyen, M., ... Li, L. H. (2019). Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence. ACS Nano, 13(10), 12184-12191. https://doi.org/10.1021/acsnano.9b06858
Gan, Wei ; Tserkezis, Christos ; Cai, Qiran ; Falin, Alexey ; Mateti, Srikanth ; Nguyen, Minh ; Aharonovich, Igor ; Watanabe, Kenji ; Taniguchi, Takashi ; Huang, Fumin ; Song, Li ; Kong, Lingxue ; Chen, Ying ; Li, Lu Hua. / Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence. I: ACS Nano. 2019 ; Bind 13, Nr. 10. s. 12184-12191.
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title = "Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence",
abstract = "Metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a sub-nanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ∼95 ± 5), sensitivity (10 -8 M), reproducibility, and reusability (∼90{\%} of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.",
keywords = "Boron nitride, Dielectric spacer, Fluorescence quenching, Metal-enhanced fluorescence, Plasmonic nanoparticle, Two-dimensional materials",
author = "Wei Gan and Christos Tserkezis and Qiran Cai and Alexey Falin and Srikanth Mateti and Minh Nguyen and Igor Aharonovich and Kenji Watanabe and Takashi Taniguchi and Fumin Huang and Li Song and Lingxue Kong and Ying Chen and Li, {Lu Hua}",
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Gan, W, Tserkezis, C, Cai, Q, Falin, A, Mateti, S, Nguyen, M, Aharonovich, I, Watanabe, K, Taniguchi, T, Huang, F, Song, L, Kong, L, Chen, Y & Li, LH 2019, 'Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence', ACS Nano, bind 13, nr. 10, s. 12184-12191. https://doi.org/10.1021/acsnano.9b06858

Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence. / Gan, Wei; Tserkezis, Christos; Cai, Qiran; Falin, Alexey; Mateti, Srikanth; Nguyen, Minh; Aharonovich, Igor; Watanabe, Kenji; Taniguchi, Takashi; Huang, Fumin; Song, Li; Kong, Lingxue; Chen, Ying; Li, Lu Hua.

I: ACS Nano, Bind 13, Nr. 10, 22.10.2019, s. 12184-12191.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Atomically thin boron nitride as an ideal spacer for metal-enhanced fluorescence

AU - Gan, Wei

AU - Tserkezis, Christos

AU - Cai, Qiran

AU - Falin, Alexey

AU - Mateti, Srikanth

AU - Nguyen, Minh

AU - Aharonovich, Igor

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Huang, Fumin

AU - Song, Li

AU - Kong, Lingxue

AU - Chen, Ying

AU - Li, Lu Hua

PY - 2019/10/22

Y1 - 2019/10/22

N2 - Metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a sub-nanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ∼95 ± 5), sensitivity (10 -8 M), reproducibility, and reusability (∼90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

AB - Metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a sub-nanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ∼95 ± 5), sensitivity (10 -8 M), reproducibility, and reusability (∼90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

KW - Boron nitride

KW - Dielectric spacer

KW - Fluorescence quenching

KW - Metal-enhanced fluorescence

KW - Plasmonic nanoparticle

KW - Two-dimensional materials

U2 - 10.1021/acsnano.9b06858

DO - 10.1021/acsnano.9b06858

M3 - Journal article

C2 - 31577417

AN - SCOPUS:85073150199

VL - 13

SP - 12184

EP - 12191

JO - A C S Nano

JF - A C S Nano

SN - 1936-0851

IS - 10

ER -