Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

L. Jelver, K. W. Jacobsen, O. Hansen, S. Smidstrup, V. Arcisauskaite, A. Blom

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Abstrakt

As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2, 3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

OriginalsprogEngelsk
Titel2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021
Antal sider1
ForlagIEEE
Publikationsdato2021
ISBN (Trykt)978-1-6654-4653-2
ISBN (Elektronisk)978-1-6654-1892-8
DOI
StatusUdgivet - 2021
Begivenhed16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021 - Vancouver, Canada
Varighed: 12. dec. 202115. dec. 2021

Konference

Konference16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021
Land/OmrådeCanada
ByVancouver
Periode12/12/202115/12/2021
SponsorIEEE Nanotechnology Council (NTC)

Bibliografisk note

Funding Information:
This work was partly funded by the Innovation Fund Denmark (IFD) under File No. 5189-00082B. We would like to thank Kurt Stokbro and Daniele Stradi for their contributions.

Publisher Copyright:
© 2021 IEEE.

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