Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Samaneh Sharbati*, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, Wulf Toke Franke

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Abstrakt

A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

OriginalsprogEngelsk
TidsskriftJournal of Electronic Materials
Vol/bind50
Udgave nummer7
Sider (fra-til)3923-3929
ISSN0361-5235
DOI
StatusUdgivet - jul. 2021

Bibliografisk note

Funding Information:
This work was supported by Interreg Deutschland-Danmark with funds from the European Regional Development Fund via the PE-Region Platform project (ref. 098-1.1-18). Find further information on Interreg Deutschland-Denmark on www.interreg5a.eu

Publisher Copyright:
© 2021, The Author(s).

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