Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

O. Renault*, E. Martinez, C. Zborowski, J. Mann, R. Inoue, J. Newman, K. Watanabe

*Kontaktforfatter for dette arbejde

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Abstrakt

Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

OriginalsprogEngelsk
TidsskriftSurface and Interface Analysis
Vol/bind50
Udgave nummer11
Sider (fra-til)1158-1162
ISSN0142-2421
DOI
StatusUdgivet - nov. 2018
Begivenhed17th European Conference on Applications of Surface and Interface Analysis - Montpellier, Frankrig
Varighed: 24. sep. 201729. sep. 2017

Konference

Konference17th European Conference on Applications of Surface and Interface Analysis
LandFrankrig
ByMontpellier
Periode24/09/201729/09/2017

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