Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

O. Renault*, E. Martinez, C. Zborowski, J. Mann, R. Inoue, J. Newman, K. Watanabe

*Kontaktforfatter for dette arbejde

Publikation: Bidrag til tidsskriftKonferenceartikelForskningpeer review

Resumé

Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

OriginalsprogEngelsk
TidsskriftSurface and Interface Analysis
Vol/bind50
Udgave nummer11
Sider (fra-til)1158-1162
ISSN0142-2421
DOI
StatusUdgivet - nov. 2018
Begivenhed17th European Conference on Applications of Surface and Interface Analysis - Montpellier, Frankrig
Varighed: 24. sep. 201729. sep. 2017

Konference

Konference17th European Conference on Applications of Surface and Interface Analysis
LandFrankrig
ByMontpellier
Periode24/09/201729/09/2017

Fingeraftryk

Chemical shift
Light sources
Spectrometers
Multilayers
Photons
X ray photoelectron spectroscopy
Electric potential
chemical equilibrium
high voltages
analyzers
photoelectron spectroscopy
spectrometers
high resolution
photons
x rays
energy

Citer dette

Renault, O., Martinez, E., Zborowski, C., Mann, J., Inoue, R., Newman, J., & Watanabe, K. (2018). Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. Surface and Interface Analysis, 50(11), 1158-1162. https://doi.org/10.1002/sia.6451
Renault, O. ; Martinez, E. ; Zborowski, C. ; Mann, J. ; Inoue, R. ; Newman, J. ; Watanabe, K. / Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. I: Surface and Interface Analysis. 2018 ; Bind 50, Nr. 11. s. 1158-1162.
@inproceedings{52cc83e058814c8d8c16350a5618d3c1,
title = "Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source",
abstract = "Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.",
keywords = "Buried interface, CrKα, Hard X-ray, HAXPES, XPS",
author = "O. Renault and E. Martinez and C. Zborowski and J. Mann and R. Inoue and J. Newman and K. Watanabe",
year = "2018",
month = "11",
doi = "10.1002/sia.6451",
language = "English",
volume = "50",
pages = "1158--1162",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "JohnWiley & Sons Ltd.",
number = "11",

}

Renault, O, Martinez, E, Zborowski, C, Mann, J, Inoue, R, Newman, J & Watanabe, K 2018, 'Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source', Surface and Interface Analysis, bind 50, nr. 11, s. 1158-1162. https://doi.org/10.1002/sia.6451

Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. / Renault, O.; Martinez, E.; Zborowski, C.; Mann, J.; Inoue, R.; Newman, J.; Watanabe, K.

I: Surface and Interface Analysis, Bind 50, Nr. 11, 11.2018, s. 1158-1162.

Publikation: Bidrag til tidsskriftKonferenceartikelForskningpeer review

TY - GEN

T1 - Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

AU - Renault, O.

AU - Martinez, E.

AU - Zborowski, C.

AU - Mann, J.

AU - Inoue, R.

AU - Newman, J.

AU - Watanabe, K.

PY - 2018/11

Y1 - 2018/11

N2 - Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

AB - Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

KW - Buried interface

KW - CrKα

KW - Hard X-ray

KW - HAXPES

KW - XPS

U2 - 10.1002/sia.6451

DO - 10.1002/sia.6451

M3 - Conference article

VL - 50

SP - 1158

EP - 1162

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 11

ER -