A resonant gate driver circuit with turn-on and turn-off dv/dt control

Aamir Rafiq; Ramkrishan Maheshwari

doi:10.1109/ETECHNXT.2018.8385357

A resonant gate driver circuit with turn-on and turn-off dv/dt control

Aamir Rafiq, Ramkrishan Maheshwari

Indian Institute of Technology Delhi

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstrakt

At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.

Originalsprog	Engelsk
Titel	2018 IEEMA Engineer Infinite Conference, eTechNxT 2018
Redaktører	Urooj Shabana Urooj, Subrata Mukhopadhyay
Antal sider	5
Forlag	IEEE
Publikationsdato	13. jun. 2018
ISBN (Trykt)	978-1-5386-1139-5
ISBN (Elektronisk)	978-1-5386-1138-8
DOI	https://doi.org/10.1109/ETECHNXT.2018.8385357
Status	Udgivet - 13. jun. 2018
Udgivet eksternt	Ja
Begivenhed	2018 IEEMA Engineer Infinite Conference, eTechNxT 2018 - New Delhi, Indien Varighed: 13. mar. 2018 → 14. mar. 2018

Konference

Konference	2018 IEEMA Engineer Infinite Conference, eTechNxT 2018
Land/Område	Indien
By	New Delhi
Periode	13/03/2018 → 14/03/2018

Dokumenter og links

10.1109/ETECHNXT.2018.8385357

Citationsformater

@inproceedings{22c918cd452444c380d2680b318e2a9d,

title = "A resonant gate driver circuit with turn-on and turn-off dv/dt control",

abstract = "At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.",

keywords = "dv/dt, EMI, Gallium Nitride (GaN), high frequency, metal-oxide semiconductor field effect transistor (MOSFET), resonant gate driver, Silicon Carbide (SiC)",

author = "Aamir Rafiq and Ramkrishan Maheshwari",

year = "2018",

month = jun,

day = "13",

doi = "10.1109/ETECHNXT.2018.8385357",

language = "English",

isbn = "978-1-5386-1139-5",

editor = "Urooj, {Urooj Shabana} and Subrata Mukhopadhyay",

booktitle = "2018 IEEMA Engineer Infinite Conference, eTechNxT 2018",

publisher = "IEEE",

address = "United States",

note = "2018 IEEMA Engineer Infinite Conference, eTechNxT 2018 ; Conference date: 13-03-2018 Through 14-03-2018",

}

TY - GEN

T1 - A resonant gate driver circuit with turn-on and turn-off dv/dt control

AU - Rafiq, Aamir

AU - Maheshwari, Ramkrishan

PY - 2018/6/13

Y1 - 2018/6/13

N2 - At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.

AB - At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.

KW - dv/dt

KW - EMI

KW - Gallium Nitride (GaN)

KW - high frequency

KW - metal-oxide semiconductor field effect transistor (MOSFET)

KW - resonant gate driver

KW - Silicon Carbide (SiC)

U2 - 10.1109/ETECHNXT.2018.8385357

DO - 10.1109/ETECHNXT.2018.8385357

M3 - Article in proceedings

AN - SCOPUS:85049859521

SN - 978-1-5386-1139-5

BT - 2018 IEEMA Engineer Infinite Conference, eTechNxT 2018

A2 - Urooj, Urooj Shabana

A2 - Mukhopadhyay, Subrata

PB - IEEE

T2 - 2018 IEEMA Engineer Infinite Conference, eTechNxT 2018

Y2 - 13 March 2018 through 14 March 2018

ER -

A resonant gate driver circuit with turn-on and turn-off dv/dt control

Abstrakt

Konference

Dokumenter og links

Fingeraftryk

Citationsformater