A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

Ali A. Orouji, Samaneh Sharbati, Morteza Fathipour

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Abstrakt

In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFETstructure .This structure is a combination of two sub structures: a buried oxide step(BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxidedouble step (ABODS). Using two-dimensional simulation, we have investigated theimprovement in device performance focusing on the breakdown voltage. The ABODSstructure exhibits a high breakdown voltage respected to other SOI structures at a muchhigher impurity concentration that can causes lower on-resistance (RON).
OriginalsprogEngelsk
TitelProceedings of the 6th ICEENG Conference, 27-29 May, 2008
Antal sider7
ForlagMilitary Technical College Kobry El-Kobbah
Publikationsdato2008
ArtikelnummerEE092
StatusUdgivet - 2008
Udgivet eksterntJa
Begivenhed6th International Conference on Electrical Engineering - Military Technical College Kobry El-Kobbah, Cairo, Egypten
Varighed: 27. maj 200829. maj 2008

Konference

Konference6th International Conference on Electrical Engineering
LokationMilitary Technical College Kobry El-Kobbah
Land/OmrådeEgypten
ByCairo
Periode27/05/200829/05/2008
NavnInternational Conference on Electrical Engineering
Vol/bind6
ISSN2636-4433

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