A new partial-SOI LDMOSFET with modified electric field for breakdown voltage improvement

A.A. Orouji, S. Sharbati, M. Fathipour

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Abstrakt

For the first time, we report a novel partial-silicon-on-insulator (PSOI) lateral double-diffused MOS field-effect transistor where the buried oxide layer consists of two sections with a step shape in order to increase the breakdown voltage. This new structure is called step buried oxide PSOI (SB-PSOI). We demonstrate that an electric field was modified by producing two additional electric field peaks, which decrease the common peaks near the drain and source junctions in the SB-PSOI structure. Two-dimensional simulations show that the breakdown voltage of SB-PSOI is nearly four to five times higher in comparison to its PSOI counterpart. Moreover, we elucidate operational principles, as well as design guidelines, for this new device.
OriginalsprogEngelsk
TidsskriftIEEE Transactions on Device and Materials Reliability
Vol/bind9
Udgave nummer3
Sider (fra-til)449-453
ISSN1530-4388
DOI
StatusUdgivet - sep. 2009
Udgivet eksterntJa

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