The main subject of this paper is the application of the Gallium Nitride (GaN) technology in the battery energy storage system (BESS). Due to voltage/current limitation of the GaN device, a GaN-based BESS is proposed for residential application. The proposed BESS includes a bidirectional half-bridge dc-dc converter and a full-bridge single-phase grid-connected inverter. To reach a power rating of 15 kW, two paralleled GaN devices are considered in the inverter. The power stage design and the controller design of the proposed BESS are studied. Moreover, the GaN device power loss analysis is performed using OrCAD Spice compared to a state-of-the-art silicon carbide (SiC) device. Finally, the performance of the controller is discussed using MATLAB Simulink.
|Titel||2019 International Conference on Clean Electrical Power (ICCEP)|
|Status||Udgivet - jul. 2019|
|Begivenhed||2019 International Conference on Clean Electrical Power (ICCEP) - Otranto, Italien|
Varighed: 2. jul. 2019 → 4. jul. 2019
|Konference||2019 International Conference on Clean Electrical Power (ICCEP)|
|Periode||02/07/2019 → 04/07/2019|