6H-SiC lateral power MOSFETs with an asymmetrical buried oxide double step structure

S. Sharbati, A.A. Orouji, M. Fathipour

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

A novel 6H-SiC lateral power MOSFET structure has been proposed with asymmetrical buried oxide double step which improves breakdown voltage. Extra step introduced in the buried oxide enhances peak electric Held and is positioned in the middle of the drift region to maximum breakdown voltage. Using thin-film layer on top of the buried oxide, facilitates employment of high impurity concentration and results in reduction of on- resistance. The doping concentration of drift region , height of step in buried oxide and difference in the thicknesses of buried oxides have been optimized by using device simulation ,to reduce the surface electric field crowding. While lateral power MOSFETs with asymmetrical buried oxide double step structure fabricated on SOI substrate exhibit a maximum breakdown voltage of 245 V with doping concentration of 3.5 times 10 16 cm -3 in drift region , a 6H-SiC lateral MOSFETs show a characteristic breakdown voltage of 2015 V with doping concentration 1.2 times 10 17 c -3 in the drift region.
OriginalsprogEngelsk
Titel2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Vol/bind3
ForlagIEEE
Publikationsdato2008
Artikelnummer10022712
ISBN (Trykt)978-1-4244-1879-4
ISBN (Elektronisk)978-1-4244-1880-0
DOI
StatusUdgivet - 2008
Udgivet eksterntJa
Begivenhed2008 International Conference on Microwave and Millimeter Wave Technology - Nanjing, Kina
Varighed: 21. apr. 200824. apr. 2008

Konference

Konference2008 International Conference on Microwave and Millimeter Wave Technology
Land/OmrådeKina
ByNanjing
Periode21/04/200824/04/2008

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